型号:

DMN21D2UFB-7B

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET N CH 20V X1-DFN1006-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
DMN21D2UFB-7B PDF
标准包装 10,000
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 760mA
开态Rds(最大)@ Id, Vgs @ 25° C 990 毫欧 @ 100mA,4.5V
Id 时的 Vgs(th)(最大) 1V @ 250µA
闸电荷(Qg) @ Vgs 0.93nC @ 10V
输入电容 (Ciss) @ Vds 27.6pF @ 16V
功率 - 最大 900mW
安装类型 表面贴装
封装/外壳 3-XFDFN
供应商设备封装 3-X1DFN1006
包装 剪切带 (CT)
其它名称 DMN21D2UFB-7BDICT
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